Improving OFF-State Bias-Stress Stability in High-Mobility Conjugated Polymer Transistors with an Antisolvent Treatment

dc.contributor.author	Broch, Katharina
dc.date.accessioned	2023-07-10T14:17:29Z
dc.date.available	2023-07-10T14:17:29Z
dc.date.issued	2023
dc.identifier.issn	0935-9648
dc.identifier.uri	http://hdl.handle.net/10900/143263
dc.language.iso	en	de_DE
dc.publisher	Wiley - V C H Verlag Gmbh	de_DE
dc.relation.uri	http://dx.doi.org/10.1002/adma.202205377	de_DE
dc.subject.ddc	530	de_DE
dc.subject.ddc	540	de_DE
dc.subject.ddc	600	de_DE
dc.title	Improving OFF-State Bias-Stress Stability in High-Mobility Conjugated Polymer Transistors with an Antisolvent Treatment	de_DE
dc.type	Article	de_DE
utue.quellen.id	20230619000000_00809
utue.personen.roh	Nguyen, Malgorzata
utue.personen.roh	Kraft, Ulrike
utue.personen.roh	Tan, Wen Liang
utue.personen.roh	Dobryden, Illia
utue.personen.roh	Broch, Katharina
utue.personen.roh	Zhang, Weimin
utue.personen.roh	Un, Hio-Ieng
utue.personen.roh	Simatos, Dimitrios
utue.personen.roh	Venkateshavaran, Deepak
utue.personen.roh	McCulloch, Iain
utue.personen.roh	Claesson, Per M.
utue.personen.roh	McNeill, Christopher R.
utue.personen.roh	Sirringhaus, Henning
dcterms.isPartOf.ZSTitelID	Advanced Materials	de_DE
dcterms.isPartOf.ZS-Issue	16	de_DE
dcterms.isPartOf.ZS-Volume	35	de_DE
utue.fakultaet	07 Mathematisch-Naturwissenschaftliche Fakultät	de_DE